IBM Research Spins 'Racetrack' Nano-Magnetic Memory

Via InformationWeek -

A next-generation nonvolatile memory dubbed "racetrack" is expected to initially replace flash memory and eventually hard-disk drives, according to IBM (NYSE: IBM) Corp. fellow Stuart Parkin of its Almaden Research Center (San Jose, Calif.)

Using spintronics--the storage of bits generated by the magnetic spin of electrons rather than their charge--a proof-of-concept shift register was recently demonstrated by IBM. The prototype encodes bits into the magnetic domain walls along the length of a silicon nanowire, or racetrack. IBM uses "massless motion" to move the magnetic domain walls along the nanowire for the storage and retrieval of information.

"We have now demonstrated a current-controlled, domain-wall, shift register which is the fundamental, underlying technology for racetrack memory," said Parkin. "We use current pulses to move a series of domain walls along a nanowire, which is not possible to do with magnetic fields."

IBM's goal, based on spintronic patents filed as early as 2004, is to use the same square micron that currently houses a single SRAM memory bit, or 10 flash bits, and drill down into the third dimension to store spin-polarized bits on a sunken racetrack-shaped magnetic nanowire. Using an area of silicon 1 micron wide and 10 microns high, IBM said its first-generation racetrack would store 10 bits compared to one, thereby replacing flash memory. Eventually, it could store 100 bits in the same area, which is dense enough to replace hard-disk drives.

"Racetrack is essentially the third turn of the crank of this new field of engineering called spintronics," said Parkin. "In current solid-state memory devices you store and control the flow of electrical charge. Here, we store and control the flow of the spin of an electron."